Template, method for manufacturing template, and pattern formation method

ABSTRACT

According to one embodiment, a template includes a base body, and a first film. The base body has a first surface and a second surface. The first surface includes silicon oxide and spreads along a first plane. The second surface crosses the first plane. The first film includes aluminum oxide. A direction from the second surface toward the first film is aligned with a direction perpendicular to the second surface. A thickness of the first film along the direction perpendicular to the second surface is not less than 0.3 nm and not more than 10 μm. The first surface includes an unevenness.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is based upon and claims the benefit of priority fromJapanese Patent Application No. 2017-176689, filed on Sep. 14, 2017; theentire contents of which are incorporated herein by reference.

FIELD

Embodiments described herein relate generally to a template, a methodfor manufacturing the template, and a pattern formation method.

BACKGROUND

For example, there is a pattern formation method in which an unevennessis transferred to a resin liquid by pressing the surface of a templateincluding the unevenness onto the resin liquid. It is desirable toimprove the productivity for the template and the pattern formationmethod.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A and FIG. 1B are schematic cross-sectional views illustrating atemplate according to a first embodiment;

FIG. 2A and FIG. 2B are schematic cross-sectional views illustrating apattern formation method according to a second embodiment;

FIG. 3A to FIG. 3F are schematic cross-sectional views illustrating themethod for manufacturing the template according to the third embodiment;and

FIG. 4A to FIG. 4C are schematic cross-sectional views illustrating thepattern formation method according to the embodiment.

DETAILED DESCRIPTION

According to one embodiment, a template includes a base body, and afirst film. The base body has a first surface and a second surface. Thefirst surface includes silicon oxide and spreads along a first plane.The second surface crosses the first plane. The first film includesaluminum oxide. A direction from the second surface toward the firstfilm is aligned with a direction perpendicular to the second surface. Athickness of the first film along the direction perpendicular to thesecond surface is not less than 0.3 nm and not more than 10 μm. Thefirst surface includes an unevenness.

According to another embodiment, a method for manufacturing a templateis disclosed. The method can preparing a base body having a firstsurface and a second surface. The first surface includes silicon oxideand spreads along a first plane. The second surface crosses the firstplane. The method can include forming a first film and a second film.The first film includes aluminum oxide. The second film includes atleast one of a phosphonic acid or a phosphonic acid compound. Thephosphonic acid includes fluoroalkyl. The phosphonic acid compoundincludes fluoroalkyl. The first film is positioned between the secondsurface and the second film.

According to another embodiment, a pattern formation method isdisclosed. The method can include preparing a template. The templateincludes a base body, a first film, and a second film. The base body hasa first surface and a second surface. The first surface includes siliconoxide, spreads along a first plane and includes an unevenness. Thesecond surface crosses the first plane. The first film includes aluminumoxide. The second film includes at least one of a phosphonic acid or aphosphonic acid compound. The phosphonic acid includes fluoroalkyl. Thephosphonic acid compound includes fluoroalkyl. The first film ispositioned between the second film and the second surface. The methodcan include causing a resin liquid to contact the unevenness, andcausing the resin liquid to solidify by irradiating a firstelectromagnetic wave on the resin liquid via the base body.

Various embodiments will be described hereinafter with reference to theaccompanying drawings.

The drawings are schematic and conceptual; and the relationships betweenthe thickness and width of portions, the proportions of sizes amongportions, etc., are not necessarily the same as the actual valuesthereof. Further, the dimensions and proportions may be illustrateddifferently among drawings, even for identical portions.

In the specification and drawings, components similar to those describedor illustrated in a drawing thereinabove are marked with like referencenumerals, and a detailed description is omitted as appropriate.

First Embodiment

FIG. 1A and FIG. 1B are schematic cross-sectional views illustrating atemplate according to a first embodiment.

FIG. 1B is an enlarged view of portion AA of FIG. 1A.

As shown in FIG. 1A, the template 110 according to the embodimentincludes a base body 10 and a stacked film 20. The template 110includes, for example, nanoimprint lithography (NIL), etc.

The base body 10 has a first surface 10 a and a second surface 10 b. Thefirst surface 10 a includes silicon oxide. The first surface 10 a is,for example, a quartz surface. The first surface 10 a is, for example, afused silica surface. For example, the material of the base body 10 maybe quartz or fused silica.

The first surface 10 a spreads along a first plane PL1. The firstsurface 10 a includes an unevenness 10 pd. As described below, theunevenness 10 pd is transferred onto a resin liquid, etc. The firstsurface 10 a is a transfer surface. For example, the unevenness 10 pd ofthe first surface 10 a corresponds to a circuit pattern to be formed.

The first plane PL1 is taken as the X-Y plane. A direction perpendicularto the X-Y plane is taken as a Z-axis direction.

The second surface 10 b crosses the first plane PL1 (the X-Y plane). Thesecond surface 10 b may be tilted with respect to the first surface 10a. The second surface 10 b is, for example, a “mesa surface.” The secondsurface 10 b is provided along the outer edge of the transfer surface(the first surface 10 a).

The stacked film 20 is provided on the second surface 10 b.

As shown in FIG. 1B, the stacked film 20 includes an intermediate film23 and a first film 21. A second film 22 is further provided in theexample.

The intermediate film 23 includes silicon. At least a portion of theintermediate film 23 may include, for example, crystalline silicon. Atleast a portion of the intermediate film 23 may include, for example,polycrystalline silicon. At least a portion of the intermediate film 23may include, for example, microcrystalline silicon. A portion of theintermediate film 23 may include, for example, amorphous silicon.

The first film 21 includes aluminum oxide. The first film 21 includesAlO_(x) (x being arbitrary). The first film 21 may include, for example,Al₂O₃.

The intermediate film 23 is provided between the second surface 10 b andthe first film 21.

The first film 21 is positioned between the second film 22 and thesecond surface 10 b. For example, the first film 21 is positionedbetween the second film 22 and the intermediate film 23. For example,the intermediate film 23 (e.g., the silicon film) is provided on thesecond surface 10 b. The first film 21 (the aluminum oxide film) isprovided on the intermediate film 23. The second film 22 is provided onthe first film 21.

The second film 22 includes at least one of a phosphonic acid includingfluoroalkyl, or a phosphonic acid compound including fluoroalkyl.

For example, in the second film 22, a group based on phosphonic acid isadhered to the first film 21. For example, the group based on phosphonicacid easily bonds to the aluminum included in the first film 21.Thereby, the second film 22 is adhered to the first film 21 relativelysecurely.

On the other hand, fluoroalkyl exists at the surface of the second film22. The surface of the second film 22 is liquid-repellent(water-repellent). On the other hand, as described above, the firstsurface 10 a of the base body 10 includes silicon oxide. The surfaceenergy of the surface of the second film 22 is smaller than the surfaceenergy of the first surface 10 a. The contact angle of the second film22 for water is larger than the contact angle of the first surface 10 afor water.

Thus, compared to the transfer surface (the first surface 10 a), theliquid repellency is set to be high at the outer edge (the secondsurface 10 b) of the transfer surface. Thereby, as described below, thetransfer liquid (the resin liquid) does not adhere easily to the secondsurface 10 b. Thereby, a template can be provided for which it ispossible to improve the productivity.

In the embodiment, a thickness t3 (the thickness along a directionperpendicular to the second surface 10 b) of the intermediate film 23is, for example, not less than 10 nm and not more than 100 nm.

A thickness t1 (the thickness along the direction perpendicular to thesecond surface 10 b) of the first film 21 is, for example, not less than0.3 nm and not more than 10 μm.

The second film 22 is, for example, a monolayer. A thickness t2 (thethickness along the direction perpendicular to the second surface 10 b)of the second film 22 is, for example, not less than 0.1 nm and not morethan 10 nm.

An example of a pattern formation method using the template 110 will nowbe described as a second embodiment.

Second Embodiment

FIG. 2A and FIG. 2B are schematic cross-sectional views illustrating apattern formation method according to a second embodiment.

A patterning substrate 10B is prepared as shown in FIG. 2A. A resinliquid 30 is coated onto the patterning substrate 10B. For example, thecoating is performed by spin coating, inkjet, dipping, etc. The methodof the coating is arbitrary. The patterning substrate 10B and the firstsurface 10 a of the template 110 are caused to oppose each other. Theresin liquid 30 is positioned between the patterning substrate 10B andthe first surface 10 a.

As shown in FIG. 2B, the resin liquid 30 is caused to contact theunevenness 10 pd of the first surface 10 a; and, for example, a firstelectromagnetic wave 45 (e.g., light) is irradiated on the resin liquid30 via the base body 10. The resin liquid 30 is caused to solidify bythe irradiation. The solidification may be performed by heat. The resinliquid 30 becomes a resin layer by solidifying. The configuration of theunevenness 10 pd is transferred onto the surface of the resin layer. Theresin layer and the template 110 are separated.

Thus, in the pattern formation method according to the embodiment, thetemplate 110 is prepared. The template 110 includes the base body 10,the first film 21, and the second film 22. As described in reference toFIG. 1A, the base body 10 has the first surface 10 a and the secondsurface 10 b. The first surface 10 a includes silicon oxide and includesthe unevenness 10 pd spreading along the first plane PL1. The secondsurface 10 b crosses the first plane PL1. The first film 21 includesaluminum oxide. The second film 22 includes at least one of a phosphonicacid including fluoroalkyl, or a phosphonic acid compound includingfluoroalkyl. The first film 21 is positioned between the second film 22and the second surface 10 b (referring to FIG. 1B).

In the pattern formation method according to the embodiment, the resinliquid 30 is caused to contact the unevenness 10 pd; and the resinliquid 30 is caused to solidify by irradiating the first electromagneticwave 45 onto the resin liquid 30 via the base body 10.

When the resin liquid 30 is caused to contact the unevenness 10 pd, thefirst surface 10 a is wetted easily by the resin liquid 30. On the otherhand, the second film 22 is provided on the second surface 10 bpositioned at the outer edge of the first surface 10 a. The secondsurface 10 b is not easily wetted by the resin liquid 30. Thereby, theadhesion of the resin liquid 30 to the portion of the second surface 10b is suppressed.

In a reference example in which the second film 22 is not provided, theresin liquid 30 adheres easily to the portion of the second surface 10b. The adhered resin liquid 30 is solidified by the irradiation of thefirst electromagnetic wave 45. There are cases where a portion of thesolidified resin liquid 30 (the resin layer) scatters; and a defectoccurs. The yield may decrease due to the defect.

By providing the second film 22 in the embodiment, the bonding of theresin liquid 30 to portions other than the first surface 10 a can besuppressed. The defects are suppressed. Thereby, high productivity isobtained.

The second film 22 is formed of a molecule including both phosphonicacid and a fluorine atom. The molecule may include, for example, aphosphonic acid including fluoroalkyl, fluorophenyl, etc. Phosphonicacid can adhere to aluminum oxide. On the other hand, it was found thatphosphonic acid does not adhere easily to silicon oxide. Thereby, it wasfound that phosphonic acid selectively adheres to aluminum oxide. Byusing a material including phosphonic acid, a film of the material canbe formed at the desired location.

In phosphonic acid including fluoroalkyl, the phosphonic acid isprovided at one end; and the fluoroalkyl is provided at the other end.Therefore, a substantially monolayer film can be formed on thefoundation in a controlled state.

By using the phosphonic acid including fluoroalkyl, the surface energyof the second film 22 can be reduced effectively. Thereby, the resinliquid 30 can effectively repel.

In the embodiment, for example, the first film 21 that includes aluminumoxide is provided as the foundation of the second film 22. The secondfilm 22 and the first film 21 can be bonded more stably by the bondbetween the phosphoric acid based on the phosphonic acid and the oxygenof the aluminum. The second film 22 can be maintained stably.

In the pattern formation at this time, the first electromagnetic wave 45is irradiated as recited above. There is a possibility that at least aportion of the bond may be damaged by the wavelength of the firstelectromagnetic wave 45.

In the embodiment, it is favorable to provide the intermediate film 23including silicon. The silicon can effectively absorb light of awavelength in the range of 150 nm to 350 nm. The intermediate film 23functions as an attenuation film (e.g., a blocking film) of the firstelectromagnetic wave 45. In particular, ultraviolet light having awavelength of 300 nm or less can be attenuated (e.g., blocked)efficiently. As described above, the first electromagnetic wave 45 isirradiated via the base body 10; therefore, the first electromagneticwave 45 reaches the first film 21 and the second film 22 after passingthrough the intermediate film 23. The first electromagnetic wave that isused to solidify the resin liquid 30 is, for example, light of awavelength of 350 nm or more. For example, the i-line (365 nm), theh-line (405 nm), the g-line (436 nm), or the like of a mercury lamp isused as the light. On the other hand, an electromagnetic wave of awavelength of 300 nm or less undesirably damages the bonds of organicmolecules. Therefore, it is favorable to attenuate electromagnetic wavesof wavelengths of 300 nm or less. The component of the firstelectromagnetic wave 45 having a wavelength of 300 nm or less iseffectively attenuated by the intermediate film 23. Therefore, thecomponent of the first electromagnetic wave 45 having a wavelength of300 nm or less substantially does not reach the first film 21 and thesecond film 22. Thus, the damage of the bonds can be suppressed by theintermediate film 23. Thereby, the second film 22 is more stable.

For example, the thickness t3 of the intermediate film 23 is 10 nm ormore. Thereby, the component of the first electromagnetic wave 45 havinga wavelength of 300 nm or less can be attenuated. In the case where thethickness t3 is thick, the first electromagnetic wave 45 can beattenuated more effectively. In the case where the thickness t3 isexcessively thick, for example, the first electromagnetic wave is noteasily transmitted because the resin liquid 30 cures. It is favorablefor the thickness t3 to be 100 nm or less.

The peak wavelength of the first electromagnetic wave 45 is, forexample, 185 nm, 254 nm, 365 nm, 405 nm, 436 nm, etc. The resin liquid30 can be caused to solidify efficiently by such a peak wavelength. Forsuch wavelengths of the first electromagnetic wave 45, the componentthat is 300 nm or less can be attenuated more effectively by theintermediate film 23.

For example, the transmittance of the intermediate film 23 is 0.02% orless for the first electromagnetic wave 45 in a range of wavelengths notless than 240 nm and not more than 300 nm. For example, thetransmittance of the intermediate film 23 is 1% or less for anelectromagnetic wave of a wavelength of 300 nm or less.

Third Embodiment

An example of a method for manufacturing a template will now bedescribed as a third embodiment.

FIG. 3A to FIG. 3F are schematic cross-sectional views illustrating themethod for manufacturing the template according to the third embodiment.

The base body 10 is prepared as shown in FIG. 3A. The base body 10 hasthe first surface 10 a and the second surface 10 b.

As shown in FIG. 3B, for example, a mask 41 is formed on the firstsurface 10 a. For example, the mask 41 is not formed on the secondsurface 10 b. For example, a chromium film or a mask used when formingthe second surface 10 b is utilized as the mask 41.

As shown in FIG. 3C, a film that is used to form the intermediate film23 is formed on the second surface 10 b; and a film that is used to formthe first film 21 also is formed. The film that is used to form theintermediate film 23 is, for example, an amorphous silicon film. Forexample, sputtering, vacuum vapor deposition, or the like is used toform the film used to form the intermediate film 23. The film that isused to form the first film 21 is, for example, an amorphous aluminumoxide film. For example, sputtering, vacuum vapor deposition, atomiclayer deposition (ALD), or the like is used to form the film used toform the first film 21. The thickness of the film used to form theintermediate film 23 is, for example, not less than 10 nm and not morethan 100 nm. The thickness of the film used to form the first film 21is, for example, not less than 20 nm and not more than 50 nm.

As shown in FIG. 3D, the mask 41 is removed; and heating is performed.The temperature of the heating is, for example, 800° C. or more.Thereby, the intermediate film 23 and the first film 21 are obtained. Atleast a portion of the intermediate film 23 may include crystallizedsilicon. At least a portion of the first film 21 may includecrystallized aluminum oxide.

As shown in FIG. 3E, a liquid 22L that includes phosphonic acidincluding fluoroalkyl is caused to contact the first film 21. Forexample, the base body 10 on which the intermediate film 23 and thefirst film 21 are provided is immersed in the liquid 22L. The phosphonicacid selectively adheres to the aluminum oxide (the first film 21). Thephosphonic acid does not adhere to the silicon oxide (the first surface10 a).

Heating is performed as shown in FIG. 3F. The temperature of the heatingis, for example, not less than 120° C. and not more than 160° C. (e.g.,about 140° C.). Thereby, the bond between the phosphonic acid and thealuminum included in the first film 21 is stabilized. For example, abond including a phosphate bond is formed.

Thus, the template 110 can be manufactured.

In the pattern formation method that uses the template 110, there arecases where characteristics of the second film 22 degrade, etc. Forexample, there are cases where the adhesion of dirt or foreign matter,peeling of a portion of the second film 22, etc., occur. In such a case,the second film 22 may be removed; and the second film 22 may be newlyformed. For example, in the pattern formation method, the followingprocesses may be performed after the process described in reference toFIG. 2B.

FIG. 4A to FIG. 4C are schematic cross-sectional views illustrating thepattern formation method according to the embodiment.

As shown in FIG. 4A, for example, in the pattern formation method, thesecond film 22 is caused to contact a solution 42 (e.g., a piranhasolution including sulfuric acid and hydrogen peroxide) after theprocess described in reference to FIG. 2B. For example, the base body 10on which the second film 22 is provided is immersed in the solution 42.Thereby, the second film 22 is removed. An intermediate state of theremoval of the second film 22 is drawn in FIG. 4A; and a portion 22 a ofthe second film 22 exists. Subsequently, the second film 22 is removed.

Thus, the removal of at least a portion of the second film 22 includes,for example, causing the second film 22 to contact a liquid includingsulfuric acid and hydrogen peroxide. The removal of the at least aportion of the second film 22 may include irradiating, on the secondfilm 22, a second electromagnetic wave of a wavelength of 300 nm orless. The second electromagnetic wave is irradiated from the second film22 side toward the first film 21. At least a portion of the second film22 is removed by the second electromagnetic wave decomposing the atleast a portion of the second film 22.

The intermediate film 23 and the first film 21 remain in this process.At least a portion of the intermediate film 23 is crystallized by theheat treatment described in reference to FIG. 3D. At least a portion ofthe first film 21 is crystallized. Thereby, the intermediate film 23 andthe first film 21 remain. In the description recited above, the removalof organic substances is performed using sulfuric acid and hydrogenperoxide. In the embodiment, the removal of the organic substances maybe performed by a method including at least one of ozone treatment,ultraviolet light irradiation, or oxygen plasma processing.

Subsequently, for example, cleaning by ultraviolet irradiation may beperformed after rinsing.

As shown in FIG. 4B, the liquid 22L including phosphonic acid includingfluoroalkyl is caused to contact the first film 21. Thereby, a film thatis used to form the second film 22 is formed selectively on the firstfilm 21.

Heat treatment (e.g., about 140° C.) is performed as shown in FIG. 4C.Thereby, a new second film 22 is formed. The bond between the phosphonicacid and the aluminum included in the first film 21 stabilizes. Forexample, a bond that includes a phosphate bond is formed.

Thus, in the pattern formation method according to the embodiment, atleast a portion of the second film 22 may be removed after thesolidification of the resin liquid 30. Then, a new second film 22 may beformed by causing a material including a phosphonic acid includingfluoroalkyl to contact the surface of the first film 21. The second film22 is renewable.

By using the template on which the new second film 22 is formed, theother resin liquid 30 may be caused to contact the unevenness 10 pd; andthe other resin liquid 30 may be caused to solidify by irradiating thefirst electromagnetic wave 45 on the other resin liquid 30 via the basebody 10.

The embodiments may include the following configurations (e.g.,technological proposals).

Configuration 1

A template, comprising:

-   -   a base body having a first surface and a second surface, the        first surface including silicon oxide and spreading along a        first plane, the second surface crossing the first plane; and    -   a first film including aluminum oxide,    -   a direction from the second surface toward the first film being        aligned with a direction perpendicular to the second surface,    -   a thickness of the first film along the direction perpendicular        to the second surface being not less than 0.3 nm and not more        than 10 μm,    -   the first surface including an unevenness.

Configuration 2

The template according to Configuration 1, further comprising anintermediate film including silicon,

-   -   the intermediate film being positioned between the second        surface and the first film,    -   a thickness of the intermediate film along the direction        perpendicular to the second surface being not less than 10 nm        and not more than 100 nm.

Configuration 3

The template according to Configuration 1 or 2, further comprising asecond film including at least one of a phosphonic acid or a phosphonicacid compound, the phosphonic acid including fluoroalkyl, the phosphonicacid compound including fluoroalkyl,

-   -   the first film being positioned between the second film and the        second surface.

Configuration 4

The template according to any one of Configurations 1 to 3, wherein atleast a portion of the first film includes a crystal.

Configuration 5

A method for manufacturing a template, comprising:

-   -   preparing a base body having a first surface and a second        surface, the first surface including silicon oxide and spreading        along a first plane, the second surface crossing the first        plane; and    -   forming a first film and a second film, the first film including        aluminum oxide, the second film including at least one of a        phosphonic acid or a phosphonic acid compound, the phosphonic        acid including fluoroalkyl, the phosphonic acid compound        including fluoroalkyl, the first film being positioned between        the second surface and the second film.

Configuration 6

The method for manufacturing the template according to Configuration 5,wherein after the forming of the first film, heating is performed, andat least a portion of the first film includes a crystal.

Configuration 7

The method for manufacturing the template according to Configuration 6,wherein after the heating, at least a portion of a surface of the firstfilm and at least a portion of the phosphonic acid including thefluoroalkyl are caused to bond by causing a material including thephosphonic acid including the fluoroalkyl to contact the surface, and byheating after the contacting.

Configuration 8

A pattern formation method, comprising:

-   -   preparing a template, the template including a base body, a        first film, and a second film, the base body having a first        surface and a second surface, the first surface including        silicon oxide and spreading along a first plane and including an        unevenness, the second surface crossing the first plane, the        first film including aluminum oxide, the second film including        at least one of a phosphonic acid or a phosphonic acid compound,        the phosphonic acid including fluoroalkyl, the phosphonic acid        compound including fluoroalkyl, the first film being positioned        between the second film and the second surface; and    -   causing a resin liquid to contact the unevenness, and causing        the resin liquid to solidify by irradiating a first        electromagnetic wave on the resin liquid via the base body.

Configuration 9

The pattern formation method according to Configuration 8, wherein

-   -   the template further includes an intermediate film including        silicon, and    -   the intermediate film is provided between the second surface and        the first film.

Configuration 10

The pattern formation method according to Configuration 9, wherein athickness of the intermediate film along a direction perpendicular tothe second surface is not less than 10 nm and not more than 100 nm.

Configuration 11

The pattern formation method according to Configuration 9 or 10, whereina peak wavelength of the first electromagnetic wave is 350 nm or more.

Configuration 12

The pattern formation method according to any one of Configurations 9 to11, wherein a transmittance of the intermediate film is 1% or less foran electromagnetic wave of a wavelength of 300 nm or less.

Configuration 13

The pattern formation method according to Configuration 10, wherein athickness of the first film along the direction perpendicular to thesecond surface is not less than 0.3 nm and not more than 10 μm.

Configuration 14

The pattern formation method according to any one of Configurations 8 to13, wherein at least a portion of the first film includes a crystal.

Configuration 15

The pattern formation method according to any one of Configurations 8 to14, further comprising:

-   -   removing at least a portion of the second film after the        solidifying of the resin liquid; and    -   forming a new second film by causing a material including the        phosphonic acid including the fluoroalkyl to contact a surface        of the first film.

Configuration 16

The pattern formation method according to Configuration 15, wherein thetemplate having the new second film formed on the template is used tocause another resin liquid to contact the unevenness, and cause theother resin liquid to solidify by irradiating the first electromagneticwave on the other resin liquid via the base body.

Configuration 17

The pattern formation method according to Configuration 15 or 16,wherein the removing of the at least a portion of the second filmincludes causing the second film to contact a liquid including sulfuricacid and hydrogen peroxide.

Configuration 18

The pattern formation method according to Configuration 15 or 16,wherein

-   -   the removing of the at least a portion of the second film        includes irradiating, on the second film, a second        electromagnetic wave of a wavelength of 300 nm or less.

Configuration 19

The pattern formation method according to any one of Configurations 8 to18, wherein the second film repels the resin liquid when the resinliquid is caused to contact the unevenness.

According to the embodiments, a template, a method for manufacturing thetemplate, and a pattern formation method can be provided for which it ispossible to improve the productivity.

Hereinabove, embodiments of the invention are described with referenceto specific examples. However, the invention is not limited to thesespecific examples. For example, one skilled in the art may similarlypractice the invention by appropriately selecting specificconfigurations of components included in the template such as the basebody, the intermediate film, the first film, the second film, etc., fromknown art; and such practice is within the scope of the invention to theextent that similar effects can be obtained.

Any two or more components of the specific examples may be combinedwithin the extent of technical feasibility and are within the scope ofthe invention to the extent that the spirit of the invention isincluded.

All templates, methods for manufacturing templates, and patternformation methods practicable by an appropriate design modification byone skilled in the art based on the template, the method formanufacturing the template, and the pattern formation method describedabove as the embodiments of the invention also are within the scope ofthe invention to the extent that the spirit of the invention isincluded.

Various modifications and alterations within the spirit of the inventionwill be readily apparent to those skilled in the art; and all suchmodifications and alterations should be seen as being within the scopeof the invention.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the novel embodiments described hereinmay be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the embodimentsdescribed herein may be made without departing from the spirit of theinventions. The accompanying claims and their equivalents are intendedto cover such forms or modifications as would fall within the scope andspirit of the invention.

1. A template, comprising: a base body having a first surface and asecond surface, the first surface including silicon oxide and spreadingalong a first plane, the second surface crossing the first plane; afirst film including aluminum oxide; and an intermediate film includingsilicon as a main component, the intermediate film being positionedbetween the second surface and the first film, a direction from thesecond surface toward the first film being aligned with a directionperpendicular to the second surface, a thickness of the first film alongthe direction perpendicular to the second surface being not less than0.3 nm and not more than 10 μm, the first surface including anunevenness.
 2. The template according to claim 1, a thickness of theintermediate film along the direction perpendicular to the secondsurface being not less than 10 nm and not more than 100 nm.
 3. Thetemplate according to claim 1, further comprising a second filmincluding at least one of a phosphonic acid or a phosphonic acidcompound, the phosphonic acid including fluoroalkyl, the phosphonic acidcompound including fluoroalkyl, the first film being positioned betweenthe second film and the second surface.
 4. The template according toclaim 1, wherein at least a portion of the first film includes acrystal. 5-19. (canceled)